Resistive random access memory (RRAM) has gained significant attentions because of its excellent characteristics which are suitable for next-generation nonvolatile memory applications. Recent studies show that multi-layer structure exhibits better resistive switching performance than single layer RRAM devices. Introducing an appropriate barrier layer could give much better cell performances. In this talk, different cell improvement techniques will be presented and discussed. A 16Mb RRAM chip has been developed in our lab and electrical tests showed excellent performance from the chip.
Dr. Wu is presently the deputy director of the Institute of Microelectronics, Tsinghua University, Beijing, China. Dr. Wu received his Ph.D. degree in electrical engineering from Cornell University, Ithaca, NY, in 2005. Prior to that, he graduated from Tsinghua University, Beijing, China, in 2000 with double B.S. degrees in material science & engineering and enterprise management. From 2006 to 2008, he was a senior engineer in Spansion LLC, Sunnyvale, CA. He joined the Institute of Microelectronics, Tsinghua University in 2009 as an associate professor. His research interests include advanced memory and low dimensional nanomaterial and devices. Dr. Wu has published more than 60 technical papers and owns more than 40 patents.